RF2103P |
RFQ for RF2103P Required Field |
 |
| Technical/Catalog Information | RF2103PTR7 |
| Vendor | RFMD |
| Category | RF and RFID |
| Package / Case | 14-SOIC (3.9mm Width), 14-SOL |
| Voltage - Supply | 2.7V ~ 7.5V |
| Current - Supply | 45mA ~ 80mA |
| Gain | 31dB |
| Frequency | 450MHz ~ 1GHz |
| RF Type | UHF |
| Packaging | Tape & Reel (TR) |
| Noise Figure | - |
| P1db | - |
| Test Frequency | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RF2103PTR7 RF2103PTR7 |
| Product | Manufacturers | Pack | D/C |
| RF2103P | - | SOP14 | 01+ |
The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUHF radio transmitters operating between 450MHz and1000MHz. It may also be used as a driver amplifier inhigher power applications. The device is self-containedwith the exception of the output matching network, powersupply feed line, and bypass capacitors, and it producesan output power level of 750mW (CW). The device canbe used in 3 cell battery applications. The maximum CWoutput at 3.6V is 175mW. The unit has a total gain of 1dB, depending upon the output matching network.
Typical Application |
Features |
| • Digital Communication Systems• Spread-Spectrum Communication Systems• Driver for Higher Power Linear Applications• Portable Battery-Powered Equipment• Commercial and Consumer Systems• Base Station Equipment | • 450MHz to 1000MHz Operation• Up to 750mW CW Output Power• 31dB Small Signal Gain• Single 2.7V to 7.5V Supply• 47% Efficiency• Digitally Controlled Power Down Mode |
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +7.5 |
VDC |
| Gain Control Voltage(VPD) |
-0.5 to +5 |
V |
| DC Supply Current |
350 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
10:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
